A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT
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A low-noise X-band microstrip hybrid VCO has been designed and realised using a 2 × 50 μm GaN-on-SiC pseudo-morphic HEMT as the active device. The transistor has been manufactured by TIGER and features a gate-length of 0.15 μm, an fT of 22 GHz, a break-down voltage of 42 Volts and an Idss, close to 1 A/mm. The VCO has been assembled with standard SMD reflow and chip-on-board technology on Rogers 4003 substrate material. The circuit is biased at +15 Volts and 38 mA and has a measured tuning range from 8.1 to 10.6 GHz, an output power level of +19 dBm and an average phase-noise level of-114 dBc/Hz @ 1 MHz offset.
Topics
TNO Identifier
221462
Publisher
EuMA
Source title
8th European Microwave Week EUMW, Gallium Arsenide applications symposium. GAAS 2005, 3-7 october 2005, Paris, France
Place of publication
Louvain-la-Neuve
Pages
257-260
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